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 JMnic
Product Specification
Silicon NPN Power Transistors
2SC3688
DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 25 150 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC3688
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0A
800
V
VCEsat
Collector-emitter saturation voltage
IC=8A ; IB=2.0A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ; IB=2.0A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0V
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0A
1.0
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
Switching times
ts
Storage time
tf
Fall time
IC=6.0A IB1=1.2A;IB2=-2.4A VCC=200V
3.0
|I
s
0.2
|I
s
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3688
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3688
4


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